Abstract
A method for selective oxidation using ultrathin nitrogen‐rich layers (<20Å) grown by rapid thermal processing is presented. Oxidation inhibition in these layers is shown to be a function of the previous oxide layer thickness and the reaction conditions during the rapid thermal nitridation cycle. The oxide growth inhibition property of these layers is tested for rapid thermal and furnace grown oxides. Since oxide growth inhibition appears to be a strong function of the initial oxide thickness, the rapid thermal nitridation process is more controllable than conventional furnace methods because of the shorter exposure time to oxygen contamination. Characterization of the nitridation reaction, the influence of the initial oxide thickness, and the localized inhibition phenomenon are presented with the aim of making this technique useful for novel VLSI structures.
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