Abstract
The well-number dependence of the optical pumping threshold power for stimulated emission of GaInN multiple quantum-well (MQW) laser structures was investigated. The pumping threshold power for a three GaInN MQW sample was found to be as low as 33kW/cm2 at room temperature. The room-temperature pulsed operation of a five GaInN MQW laser diode (LD), whose number of wells was determined based on the optical pumping experiment, was also demonstrated. The lowest threshold current density was 9.5kA/cm2. The lasing wavelength was 417.5nm with a full-width at half-maximum (FWHM) less than the spectrum resolution of 0.2nm.
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