Sub-mA threshold operation of λ=1.5 μm strained InGaAs multiple quantum well lasers grown on (311)B InP substrates

Abstract

1.5 μm wavelength InxGa1−xAs-InGaAsP (x=0.7, resulting in 1.2% compressive strain and x=0.53, resulting in zero strain) multiple quantum well (MQW) structures were grown on (311)B, (511)A, (511)B, and (001)InP substrates by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Intense and narrow linewidth room-temperature photoluminescence spectra indicate the device quality of the MQW structures. Strained MQW lasers grown on InP substrates misoriented towards (111)B show about 25% lower threshold current densities than the unstrained MQW lasers. The high quality of the strained MQW structures grown on (311)B InP substrates is demonstrated by the realization of 0.9 mA threshold current buried heterostructure lasers employing semi-insulating current blocking layers, and entirely grown by LP-OMVPE.