Abstract
Luminescent epitaxial β-FeSi 2 films were grown on the Ag-layer pre-coated Si(111) substrates by metal-organic chemical vapor deposition method. These epitaxial β-FeSi 2 films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi 2 films grown at 700°C was larger than that of β-FeSi 2 films at the other deposition temperature, indicating the decreasing of the density of non-radiative recombination centers in β-FeSi 2 film. The thermal equilibrium Si vacancy is considered to act as the non-radiative recombination centers in β-FeSi 2 .
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
