Cubic SiC Nano-Thin Films and Nano-Wires: High Vacuum Metal-Organic Chemical Vapor Deposition, Surface Characterization, and Application Tests

Abstract

Single-crystalline and epitaxial cubic silicon carbide (beta-SiC) nano-thin films have been deposited on Si(100) substrates at a sample temperature of approximately 900 degrees C using single source precursors by the thermal metal-organic chemical vapor deposition (MOCVD) method. Diethylmethylsilane and 1,3-disilabutane, which contain Si and C atoms in the same molecule, were used as precursors without any carrier or bubbler gas. Upon increasing the deposition temperature from 900 to 950 degrees C, beta-SiC nano-thin films with relatively small crystals and smoother surfaces were created on Si(100) substrates. Moreover, beta-SiC nano-wires with 40 approximately 100 nm in diameter have also been grown selectively on nickel catalyzed Si(100) substrates with dichloromethylvinylsilane by the MOCVD method. The deposition temperature in this case was as low as 800 degrees C under the pressure of 5.0 x 10(-2) Torr. It is worth noting that the initial growth rates of deposited beta-SiC nano-thin films and nano-wires strongly depend on the deposition temperature rather than the time. In order to test the possibility of applications of these materials for electronic components such as field emitter, MEMS, and high-power transistor, we fabricated the nanoelectronic devices using both beta-SiC nano-wires and nano-thin films. With these preliminary application tests, it is expected that SiC nanowires can be used as field emitter and nanoelectronic high-power transistor, and application of the SiC nano-thin films to MEMS is promising as well.