Abstract
Luminescent epitaxial β-FeSi2 films were grown on the Ag-layer pre-coated Si(111) substrates. These epitaxial β-FeSi<sub>2</sub> films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The full width at half maximum of the rocking curve of β-FeSi<sub>2</sub> <i>202/220 </i>was 0.19o for the films deposited at 760oC on the Si(111) substrates with 85 nm-thick silver layer. The transmission electron microscope analysis indicated the flat and steep β-FeSi<sub>2</sub>/Si interface. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi2 films was larger than that of the directly grown β-FeSi<sub>2</sub> films on the Si(111) without silver layer, indicating the decreasing of the density of nonradiative recombination centers in β-FeSi<sub>2</sub> film.
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