Abstract
Room-temperature pulsed operation has been achieved, for the first time, in InGaP/InGaAlP multiquantum-well (MQW) laser diodes grown by molecular beam epitaxy (MBE). This MQW laser is composed of 10 nm-thick InGaP well layers and 5 nm-thick InGaAlP barrier layers. The lasing wavelength was 658 nm. The threshold current density and T0 value were 7.6 kA/cm2 and 115 K, respectively.
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