Abstract
The authors report high-performance InGaAs/InAlAs MQW (multiquantum well) laser diodes grown by gas source molecular beam epitaxy. The cladding layers are composed of InP layers and the SCH layers are composed of InGaAsP layers, which makes it possible to fabricate a BH (buried heterostructure) MQW structure and DFB (distributed feedback) MQW structure. The threshold current for an HR coated diode was measured to be 3.5 mA. The relaxation oscillation frequency of MQW laser diodes was measured from the resonant peak appearing in the intensity noise spectrum, and the enhancement of relaxation oscillation frequency was demonstrated. The authors also fabricated DFB MQW lasers and demonstrated that the InGaAs/InAlAs MQWs with InGaAsP SCH are promising for high-bit-rate optical communication systems. >
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