1.3-μm InP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections

Abstract

The superior performance of n-type modulation doping in 1.3- micrometer InP-based strained multi quantum-well (MQW) lasers is demonstrated. Experimental results, which is in good agreement with theoretical results, confirm that the threshold current density, carrier lifetime, and internal loss in n-type modulation-doped (MD) MQW lasers is lower than those in conventional undoped MQW lasers at room and high temperatures. In addition, 2.5-Gb/s modulation under zero-bias current is achieved with the modified n-type MD-MQW laser at 85 degrees Celsius. These results confirm the suitability of this type of laser as a light source for high-density parallel optical interconnections.