Abstract
The circularly polarized electroluminescence from an InGaAs/GaAs light-emitting diode with a (Ga,Mn)Sb/n+GaAs tunnel junction was investigated in the temperature range of 10-300 K. The obtained polarization degree is believed to be driven by the spin injection of electrons from the valence band of ferromagnetic (Ga,Mn)Sb into the conduction band of n+GaAs. The temperature dependencies of the polarization characteristics are determined by the ferromagnetic properties of the (Ga,Mn)Sb layer. The room temperature circularly polarized emission is prospective for the fabrication of a spin light-emitting diode with an injector based on a diluted magnetic semiconductor.
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