Abstract
We demonstrate electrical electron spin injection in a p+-(Ga,Mn)As/n+-GaAs tunnel junction with an n-GaAs/(In,Ga)As/p-GaAs light emitting diode (LED). By applying a reverse bias to the p+-(Ga,Mn)As/n+-GaAs junction (forward bias to the LED), we observed clear hysteresis in electroluminescence (EL) polarization. The magnitude of the EL polarization, which does not depend critically on the spacer layer thickness up to 800 nm, is found to be about five times greater than that of the hole spin injection.
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