Abstract
We have determined the elemental composition of laser-deposited (Ga,Mn)Sb, (In,Mn)As, MnP, MnAs, and MnSb layers. The InMnAs layers were not single-phase and contained MnAs clusters. Active Ga and Mn diffusion to the substrate and arsenic diffusion from the substrate during the GaMnSb growth process is accompanied by the formation of a GaMnAs intermediate layer.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
