Abstract
The first room-temperature operation of In0.5Ga0.5As quantum dot lasers grown directly on Si substrates with a thin (≤2 µm) GaAs buffer layer is reported. The devices are characterised by Jth∼1500 A/cm2, output power >50 mW, and large T0 (244 K) and constant output slope efficiency (≥0.3 W/A) in the temperature range 5–95°C.
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