Abstract
Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher indium (In) composition, specifically In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures. The detection cut-off wavelength is successfully extended to 2.6 µm at RT, as verified by the Fourier Transform Infrared Spectrometer (FTIR) detection spectrum measurement at RT. The In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures are lattice-matched to GaSb substrates, ensuring high material quality. The noise current at RT is analyzed and found to be the shot noise-limited at RT. The e-SWIR APD achieves a high multiplication gain of M~190 at a low bias of Vbias=- 2.5 V under illumination of a distributed feedback laser (DFB) with an emission wavelength of 2.3 µm. A high photoresponsivity of R>140 A/W is also achieved at the low bias of Vbias=-2.5 V. This type of highly sensitive e-SWIR APD, with a high internal gain capable of RT operation, provides enabling technology for e-SWIR sensing and imaging while significantly reducing size, weight, and power consumption (SWaP).
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