Room temperature preparation ofcaxis oriented ZnO films on Si(100), SiO2, and ZnO substrates by rf magnetron sputtering

Abstract

Growth of ZnO thin films with c axis (002) orientation has been demonstrated at room temperature on Si(100), SiO2, and amorphous ZnO substrates by the rf magnetron sputtering method. The structural properties of the ZnO thin films were investigated with varying rf power. X-ray diffraction analysis revealed that increasing rf power helped to increase the c axis lattice constant and grain size, regardless of substrate material. Scanning electron microscopy indicated that the structural morphology of the ZnO films was not dependent on the substrate material.