Effect of RF Powers on the Electro·optical Properties of ZnO Thin-Films

Abstract

Abstract ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin filmswere investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Halleffect. The substrate temperature and growth time were kept constant at 200 o C at 30 minutes, respectively. The RF power wasvaried within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientationalong the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RFpower. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. Inthe electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughnessincreased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal rangeof RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputteringpower; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus,excess RF power will act as a factor that degrades the device characteristics. Key wordsZnO, RF magnetron sputter, hall, PL.