Abstract
We report what is believed to be the first observation of room temperature photoluminescence of amorphous GaAs. By means of low-temperature pulsed-laser deposition amorphous GaAs thin films were deposited on glass and Si substrates. Almost identical room temperature emission spectra with a peak centered at 1.368 eV have been observed for both samples. The results stress the capability of laser deposition to form hetero-paired optical device structures for room temperature operations independent of substrate morphologies.
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