Abstract
Amorphous and microcrystalline GaAs thin films were produced by r.f. and d.c. sputtering. The films were characterized by scanning electron microscopy, electron probe microanalysis and X-ray spectrometry. Measurements of the temperature dependence of the conductivity show that variable-range hopping takes place in the grain boundaries of microcrystalline films above room temperature. In amorphous films, depending on the quality of the samples, variable-range hopping and Arrhenius conductivity was observed. Obliquely deposited amorphous and microcrystalline films showed an anomalous photovoltaic effect and, additionally, some of these samples exhibited a negative photoconductivity for illumination with high energy light (hv < 3 eV).
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