Abstract
In0.16Ga0.84As0.15Sb0.85/Al0.35Ga0.65Sb double heterostructure injection lasers have been grown by molecular beam epitaxy on (100) GaSb substrates. Room-temperature operation near 2.2 μm wavelength has been achieved under pulsed conditions. Low pulsed threshold current density of 4.2 kA/cm2 and a characteristic temperature of T0∼26 K have been obtained.
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