Abstract
Monolithic integration of passive waveguides with double heterostructure (DH) lasers has the potential for a number of interesting device applications, including lasers with distributed Bragg reflectors or integrated external cavities, intensity or frequency modulators, and mode-locked DH lasers. Previous attempts to achieve this structure with GaAs/GaAlAs or GaInAsP/InP systems resulted in relatively high threshold current densities.(1-6) We have developed in this work a liquid-phase epitaxial (LPE) technique to grow Ga x 2 In 1 − x 2 As y 2 P 1 − y 2 / InP DH Passive waveguides integrated with and precisely aligned to previously grown Ga x 1 In 1 − x 1 As y 1 P 1 − y 1 / InP DH laser structures. Uniform waveguide layers and good surface morphology have been achieved in the LPE regrowth. Relatively low threshold current densities (2.4 - 3.1 kA/cm2) were obtained for broad area lasers with one integrated passive waveguide section.
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