Abstract
Two III-V quaternary systems, InxGa1-xAsySb1-y lattice-matched to GaSb and InAs1-x-yPxSby lattice-matched to InAs, were investigated to fabricate double heterostructure (DH) lasers for longer wavelength optical sources as compared with InGaAsP/InP DH lasers. DH lasers with an emission wavelength around 2 µm were fabricated by using InGaAsSb with GaSb enriched composition as an active layer and AlGaAsSb as confinement layers. The pulsed room temperature operation at 1.8 µm wavelength was performed for In0.05Ga0.95As0.04Sb0.96/Al0.2Ga0.8As0.02Sb0.98 DH lasers fabricated by liquid phase epitaxy. For 3∼4 µm wavelength optical sources, it has shown that InAsPSb is one of the most promising materials.
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