Room temperature operated single electron transistor fabricated by electron beam nanolithography

Abstract

We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficial Si layer of SIMOX substrate, combined with an image reversal technique using ECR plasma oxidation. The SET fabricated with this method accommodates a 10-nm Si island and achieved room temperature operation.