Abstract
A room temperature nanoimprint lithography (RTNIL) employing PMMA/HSQ (hydrogen silsequioxane) bilayer resist stack was developed. By combining with a post dry-etching process, this sequence is capable of patterning high resolution features in resist with high aspect ratio. Our investigation showed that the thermal nanoimprint lithography (NIL) with a heat cycle had considerable amount of pattern placement errors, but the RTNIL developed in this work was free from pattern misplacement. Using the PMMA/HSQ bilayer technique, 100 nm wide PdAu wires were readily replicated. Other advantages of the PMMA/HSQ bilayer for the RTNIL over conventional thermal NIL process have been discussed.
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