Room Temperature Nanoimprint Technology Using Hydrogen Silsequioxane (HSQ)

Abstract

Room-temperature nanoimprint lithography (RT-NIL) technology has been developed to overcome critical dimensions and pattern placement error due to thermal expansion in the conventional nanoimprint lithography (NIL) process. We propose RT-NIL using hydrogen silsequioxane (HSQ) instead of PMMA used in conventional NIL, and demonstrate HSQ replicated patterns with 90 nm hole diameter and 50 nm linewidth realized by room-temperature replications. We performed step-and-repeat replications using HSQ on a 1.5 in. wafer and evaluated the uniformity of the imprinted HSQ patterns.