Abstract
We present the first measurements of room-temperature excitonic absorption saturation in a II-VI semiconductor quantum well. Strong room-temperature excitonic absorption in CdZnTe/ZnTe quantum wells is found to saturate at an incident optical intensity that is considerably higher than that for III-V quantum wells. We show that this phenomenon can be interpreted in terms of the smaller excitonic Bohr radius characteristic of wide-gap II-VI compounds.
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