Abstract
Room temperature excitonic absorption peaks have been difficult to observe in II - VI semiconductors, which has been attributed to strong exciton-photon interactions. The first well-defined room temperature excitonic absorption peaks, in II - VI semiconductors, were measured in CdxZn1-xTe/ZnTe multiple quantum wells (MQWs) grown by molecular beam epitaxy on GaAs substrates. Transmission, photoluminescence (PL), PL excitation, and resonant Raman scattering experiments reveal the important contributions to the exciton linewidth. The strong room temperature excitonic absorption was found to saturate at an incident optical intensity considerably higher than for III - V MQWs. The first visible wavelength waveguide intensity modulator based on the quantum-confined Stark effect was recently demonstrated. Femtosecond time resolved measurements of room temperature exciton ionization by longitudinal optic (LO) phonon scattering, has resulted in an exciton ionization time of approximately equals 125 fsec.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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