Abstract
Room temperature excitonic absorption peaks have been difficult to observe in II-VI semiconductors, which has been attributed to strong exciton-phonon interactions. The first well-defined room teaperature excitonic absorption peaks, in II-VI semiconductors, were aeasured in CdxZn1-xTe/ZnTe multiple quantum wells (MQWs) grown by Rolecular bean epitaxy on GaAs substrates. Transmission, photoluinescence (PL), PL excitation and resonant Raman scattering experiRents reveal the important contributions to the exciton linewidth. The strong room temperature excitonic absorption was found to saturate at an incident optical intensity considerably higher than for III-V HQW5. The first visible wavelength waveguide intensity modulator based on the quantumconfined Stark effect was recently demonstrated. Featosecond time resolved measurements of room temperature exciton ionization by longitudinal optic (LO) phonon scattering, has resulted in an exciton ionization time of ? 125 fsec.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
