Abstract
Room temperature excitonic absorption peaks have been difficult to observe in II-VI semiconductors, which has been attributed to strong exciton-phonon interactions. The first well-defined room teaperature excitonic absorption peaks, in II-VI semiconductors, were aeasured in CdxZn1-xTe/ZnTe multiple quantum wells (MQWs) grown by Rolecular bean epitaxy on GaAs substrates. Transmission, photoluinescence (PL), PL excitation and resonant Raman scattering experiRents reveal the important contributions to the exciton linewidth. The strong room temperature excitonic absorption was found to saturate at an incident optical intensity considerably higher than for III-V HQW5. The first visible wavelength waveguide intensity modulator based on the quantumconfined Stark effect was recently demonstrated. Featosecond time resolved measurements of room temperature exciton ionization by longitudinal optic (LO) phonon scattering, has resulted in an exciton ionization time of ? 125 fsec.
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