Abstract
Epitaxial growth of a titanium nitride (TiN) on (6H)-SiC (0001) is achieved at room temperature by means of direct current magnetron sputtering. The epitaxial relationship is established by X-ray pole figure and Φ-scan. Cross-sectional transmission electron microscopy and pole figure analysis show that the orientation relationship is ( 111 ) TiN ‖ ( 0001 ) SiC [ 0 1 ¯ 1 ] TiN ‖ [ 1 2 ¯ 10 ] SiC , It is different from that on sapphire, “ ( 111 ) TiN ‖ ( 0001 ) Al 2 O 3 [ 10 1 ¯ ] TiN ‖ [ 10 1 ¯ 0 ] Al 2 O 3 ” , in spite of the same crystal structure of substrate surfaces. Different lattice mismatch is a plausible explanation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
