Room-temperature electroluminescence from radial p–i–n InP/InAsP/InP nanowire heterostructures in the 1.5-µm-wavelength region

Abstract

Crystal growth of radial p–i–n InP nanowires (NWs) with InAsP quantum well (QW) layers by metalorganic vapor-phase epitaxy was studied, and vertical NW light-emitting devices were fabricated. Radial p–i–n NWs were formed using position-controlled n-type InP NW cores. By optimizing the flow rates of the Zn source, Zn-doped p-type InP shells were grown on the sidewall of the radial QW structures while maintaining the photoluminescence intensity of the QWs. The fabricated devices showed current rectification originating from the p–i–n diode structures. Electroluminescence from the radial QWs was clearly observed in the 1.5-µm-wavelength region at room temperature for the first time.