Abstract
Room temperature cw laser operation was achieved at a wavelength as short as 671 nm using an InGaAsP/InGaP double heterostructure (DH) laser on GaAs0.62P0.38 substrate for the first time. The DH structure was grown by the hydride vapor phase epitaxial method with a dual-growth-chamber reactor. With a mesa stripe laser structure, the threshold current density Jth was as low as 4.5 kA/cm2 and the characteristic temperature T0 was 90 K at around room temperature.
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