Abstract
AbstractWe have fabricated GaInP/Er,O‐codoped GaAs (GaAs:Er,O)/GaInP double heterostructure (DH) laser diodes (LDs) by organometallic vapor phase epitaxy (OMVPE) and investigated their lasing characteristics at GaAs band‐edge. Laser emission at the GaAs band‐edge was observed from the DH LDs at room temperature. The threshold current density (Jth) increased by doping of Er. The slope of the Jth against the reciprocal cavity length (1/L) also increased by the Er doping, indicating reduced relaxation time of injected carriers in GaAs:Er,O. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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