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Abstract
Optical properties of GaInP/GaAs:Er,O/GaInP double heterostructure (DH) laser diodes (LDs) grown by organometallic vapor phase epitaxy (OMVPE) were investigated. The Er-doped LDs showed laser emission of the GaAs band-edge. The threshold current density (Jth) was 3.6 kA/cm2 on the n-type GaAs substrates and 15.8 kA/cm2 on the p-type at 77 K. The Er-doped LDs on the n-type substrate showed a strong sulfur (S)-related emission in the near-infrared region. Conversely, the S-related emission was strongly suppressed in the LDs on the p-type substrates. This was achieved by preventing the incorporation of S atoms into the GaAs active layer. For the electroluminescence (EL) properties, 1.54 μm-emission from Er3+ ions was clearly observed in the Er-doped LDs on p-type substrates. The dependence of EL intensities on the current density showed that the suppression of an energy transfer from the Er3+ ion to the S-related emission was necessary for efficient Er3+ emission at the stimulated emission region of the GaAs band-edge.
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