Abstract
We have investigated the room temperature spin coherence properties of the axial NVkk center in 4H–SiC by pulsed high-frequency electron spin resonance and electron-nuclear double resonance techniques. Our results show a remarkable phase coherence time (TCoherence) of 25.3 μs at room temperature for ensembles of NV centers. We demonstrate precise control over NV defect spins through Rabi oscillations, which exhibit a linear response to microwave power. Additionally, the demonstrated room temperature readout of the intrinsic 14N nuclear spin (I = 1) underscores its potential as a robust nuclear spin memory resource, further positioning NV defects in 4H–SiC as an advanced platform for implementing cutting-edge quantum technologies in semiconductor systems.
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