Abstract
Epitaxial (002) VO2 films were grown on c-sapphire with Ga:ZnO and ZnO buffer layers. We investigated the influence of twin boundaries on the semiconductor-to-metal transition (SMT) characteristics of VO2, when current flows parallel and perpendicular to the twin boundaries. The structure of the twin boundary was kept the same for these two configurations. The hysteresis in SMT characteristics is considerably reduced when current flows parallel to the boundaries compared to that in the normal direction of the boundaries. We present a model to explain these observations and discuss the role of these boundaries on the SMT characteristics, and the importance of grain boundary engineering in the design of VO2 based devices.
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