Abstract
We report on synthesis and phase transition characteristics of VO2 films grown on various single crystal substrates Al2O3 (0001), TiO2 (101), TiO2 (001), and MgF2 (001). An epitaxial orientation relationship was established for films on Al2O3 and TiO2 from x-ray 2θ-ω coupled scans and φ scans. Films grown on these substrates exhibit a metal to insulator transition below that for bulk single crystals with accompanying resistance change of 3 to 4 orders of magnitude. Trends in phase transition characteristics with substrate physical properties are analyzed. Postdeposition treatment studies in oxygen and ozone at low temperatures demonstrate that epitaxial VO2 films on TiO2 can tolerate oxidation environment better than the films on Al2O3. The studies could be of relevance toward further advancing structure-functional property relations in this important material system.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
