Role of titanium doping on indium oxide thin films using spray pyrolysis techniques

Abstract

Indium oxide (In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) and titanium-doped indium oxide (ITiO) thin films were deposited onto glass substrates by the spray pyrolysis technique. The variations of the structural, optical and electrical properties with the titanium incorporation were investigated. The XRD profile of the films confirmed the cubic structure with preferred orientation along the (222) planes. The average crystalline size evaluated from the XRD profile lay in between 24.96nm and 34.47nm. The other crystallographic parameters namely, micro strain, dislocation density, and lattice constant had been estimated and reported. The average optical transmittance of the sample varied from 60% to 86% in the visible region. The optical band gap energy of the films varied from 3.68eV to 3.3eV, depending on the concentration of titanium. Topography and surface morphology of the films were performed by AFM, SEM and EDX analyses, respectively. It is observed that resistivity of the films decreases with increase of mobility for the doped film.