Role of the silicon dioxide in formation of higher manganese silicide films

Abstract

The analysis of possibilities of producing the thin-film thermoelectric radiation detector was carried out. It is shown that use of the higher manganese silicide (HMS) films, which formed directly on silicon substrate, allows to avoid the row constriction losses, to increase detectivity and fast-action of the detectors. We researched the HMS film formation during deposition of the manganese vapors on silicon substrate by diffusion method. We also carried out electronic - microscopic researches of the higher manganese silicide (HMS) films. In the work special attention was paid to study of the influence of the grown silicon dioxide layer on the HMS film formation process. It is shown that manganese vapors do not interact with the grown silicon dioxide layer. It is proved silicon dioxide layer can serve as protective mask in the HMS film formation process. This allows using SiO/sub 2/ layer for development thermoelectric heterostructures.