Abstract
The growth of higher manganese silicide (HMS) films on monocrystalline silicon (100) has been investigated. This growth was performed by solid-state reaction. Using electron beam evaporation a single layer of manganese was deposited on a silicon substrate. The samples so prepared were heat treated in a classical furnace under vacuum. A highly textured film was obtained after treatment at 890°C for 18 h. The obtained HMS was identified as Mn15Si26. The texture relationship is (105) [100] Mn15Si26 ∥ (100) [100] Si. Mn15Si26 has a tetragonal cell; hence, the angle between the c-axis and the normal of the sample surface is 60°. Since this value is far from 0° and 90°, a large transverse thermoelectric effect is expected in these samples. As a consequence the HMS films could be used in anisotropic electromotive force-thermogenerators.
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