Growth technique and structural properties of the higher manganese silicide films

Abstract

Higher manganese silicide - MnSi/sub /spl sim/1.7/ was found as semiconducting and can be a promising thermoelectric material for high temperature applications. In this work, we report the growth of continuous higher manganese silicide film formed on silicon substrate. The growth technique of the higher manganese silicide films was described in detail. The element-phase composition of the silicide films was determined by scanning electron X-ray microanalyzer. Si and Mn doping depth profiles of the samples were presented. As a result of the experimental investigation we found optimal operating conditions to grow polycrystalline higher manganese silicide films. It was established that the grown silicide layer at the substrate temperature T/sub sub/= 1040-1060/spl deg/C consist predominantly of higher manganese suicide MnSi/sub 1.71-1.75/ grains with thickness ranging from 5 to 30 /spl mu/m and oriented along the substrate normal. The structure of grown silicide films was studied by electron diffraction, and the morphology of these films studied using scanning electron microscopy.