Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

Abstract

The role of shallow interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors (n-MOSFETs) has been studied. Our experimental results reveal that the excess channel noise in gigahertz range induced by hot carrier stress could be attributed to the carrier transitions associated with shallow interface states. This suggests that the shallow Si/SiO2 interface states in MOSFETs may play an important role in determining the channel noise in gigahertz frequency range.