Abstract
High performance, air stable and solution-processed small molecule 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) based organic field-effect transistors (OFETs) with various electrode configurations were studied in detail. The contact resistance of OFET devices with Ag, Au, WO3/Ag, MoO3/Ag, WO3/Au, and MoO3/Au were compared. Reduced contact resistance and consequently improved performance were observed in OFET devices with oxide interlayers compared to the devices with bare metal electrodes. The best oxide/metal combination was determined. The possible mechanisms for enhanced electrical properties were explained by favorable morphological and electronic structure of organic/metal oxide/metal interfaces.
Highlights
Electrode/organic layer interface mainly determine the contact resistance in organic field-effect transistors (OFETs), which becomes a main factor in limiting the device charge carrier mobility and switching speed, especially when the channel length is reduced
We studied the effect of different metals and their combination with interfacial layers as electrodes for C8-BTBT based OFETs
Top contact (BG-TC) OFET device structure is schematically shown in Fig. 1(a), where Au or Ag is served as source/drain electrode with or without MoO3 and WO3 interlayers
Summary
Electrode/organic layer interface mainly determine the contact resistance in OFETs, which becomes a main factor in limiting the device charge carrier mobility and switching speed, especially when the channel length is reduced. We studied the effect of different metals and their combination with interfacial layers as electrodes for C8-BTBT based OFETs. We first separately fabricated devices with Au and Ag only electrodes and compared with devices which incorporate MoO3 or WO3 interlayers.
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