Reducing contact resistance in bottom contact organic field effect transistors for integrated electronics

Abstract

Organic field effect transistors (OFETs) are a promising technology for developing truly flexible, stretchable and bio-compatible integrated electronics. Understanding the contact resistance mechanisms and introducing strategies to minimize the contact resistance is vital for the continuous performance improvement of OFETs. This paper firstly discusses the suitability of various device structures for short channel OFETs and fine resolution integration. After describing the formation of the contact resistance composed of the injection and access parts, this paper comprehensively reviews approaches for reducing contact resistance with bottom contact structure OFETs, including by interface engineering and doping the organic semiconductor layer. The pros and cons of each approach are discussed in detail. It is concluded that a combination of various techniques is required to minimize the contact resistance for fine resolution integration.