Role of Gd dopants on electrical properties of RF co-sputtered HfO2 thin films for resistive switching applications

Abstract

Hf1−xGdxO2 thin films have been deposited on silicon substrates by co-sputtering with the variation in RF power of Gd target from 15 W to 90 W. The Gd content was found to be increased up to 15% with the rise in RF power of Gd to 90 W. At higher RF powers, the Hf1−xGdxO2 thin films have shown the evolution of cubic phase. The dielectric constant was found to be increased up to 33 for the Gd concentration of 9%. The oxide charge density was found to be decreased with the rise in RF power. The interface trap density has a minimum value for the film deposited at 60 W. The decrease in leakage current density was also observed for the Hf1−xGdxO2 films deposited at 90 W RF power of Gd target. The memristors, fabricated at Gd power of 60 W, have shown current on/off ratio of 332.