Abstract
With the goal to render the ReRAM memory integrable with CMOS backend and compatible with current BEOL metal choices (Cu, Ta, Ti, W), we have chosen the well-behaved and well-characterized Cu/TaOx/Pt ReRAM cell as a benchmark device and have replaced the active (Cu) and inert (Pt) electrodes with Ta and Ti electrodes. Five derivative devices were manufactured including: Pt/TaOx/Pt, Cu/TaOx/Ti, Cu/TaOx/Ta, Ta/TaOx/Pt, and Ti/TaOx/Pt. Out of these five devices, only the Ti/TaOx/Pt produced reliable set and reset switching characteristics. Nevertheless, the switching behavior of the other derivative devices provides a great deal of insight into the formation, shape and rupture of conductive filaments in ReRAM devices which would be difficult to gain otherwise from only one type of a device. The present findings are compared with results on the same and similar devices reported elsewhere in the literature.
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