Abstract
Resistive switching (RS) in metal/oxide/metal stack structures plays a key role in resistive RAM. The formation and rupture of conductive filaments have been widely accepted as an origin of RS mechanism especially in binary transition metal oxides. Forming exhibits some analogies with a dielectric breakdown of SiO2 thin films. In this study, Time-Dependent Forming (TDF) characteristics of Pt/NiO/Pt stack structures have been investigated. The results revealed that the formation of conductive filaments at the forming process by applying constant voltage followed a weakest-link theory and that the weakest spots were almost randomly distributed in NiO thin films according to the Poisson statistics. Furthermore, the distribution of TDF characteristics depends on NiO crystallinity. A small variation of initial resistance tends to result in a large variation of time to forming and vice versa.
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