Abstract
The memristive behavior has been observed with Au and Pd metal nanodots embedded high-k dielectric films of Nb2O5. A superior control in terms of consistency during transition between two resistances states have been found for Pd embedded Nb2O5 devices as a consequence of better control of formation or rupture of conductive filaments. Direct surveillance of the formation or rupture of conductive filaments at nanoscale during memristive switching are performed using current imaging tunneling spectroscopy (CITS) technique as measured by scanning tunneling microscope.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
