Role of boron atoms on fluorine difftusion in pre-amorphized silicon

Abstract

Fluorine co-implantation technique has been studied extensively to form ultra-shallow p/sup +/n junctions. Many of these studies report the retarded diffusion of fluorine and boron in crystalline silicon, while there are few reports on the interaction of fluorine with boron in amorphous silicon. Recently, Jacques et al. report that fluorine enhances boron diffusion in amorphous silicon (2003). However, the mechanism of the fluorine-enhanced boron diffusion is not clarified yet because fluorine diffusion has not been investigated in detail. The aim of this work is to elucidate the physical mechanism on the interaction of fluorine with boron through the experiments on fluorine diffusion in boron-doped pre-amorphized silicon.