Abstract
The time evolution of the transiently enhanced diffusion and of the electrical activation of boron in crystalline silicon during postimplantation thermal annealing is modelled by solving a system of coupled diffusion-reaction equations for the dopant and the silicon point defects. Outdiffusion of an implantation-induced silicon self-interstitial oversaturation and the kick-out reaction B int ⇌ B sub + 1 are assumed to be the leading mechanisms for boron activation. The concept of point defect impurity pair diffusion is used to model the diffusion process. Results are shown for low-temperature furnace annealing after implantation of low or medium boron doses.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
