Abstract
AbstractBoron is one of the most commonly used p‐type dopant in silicon. We found that boron in crystalline silicon does not have identical distribution in depth profile between front side and rear side SIMS analysis. Comparing boron profiles of both analyses, different distributions can be seen at the depth in a few hundreds of nanometers from the surface side. Additionally, we continued analysis to investigate the behavior of boron in homogenously boron‐doped sample, such as p‐type silicon substrate. The result showed that distortion arises at the surface side during analysis and consequently nonuniform distribution was obtained. From the results, we estimate that boron should be redistributed during usual SIMS analysis, and study various analytical conditions in order to suppress such phenomenon. In this study, entire experiments were carried out by CAMECA ims 6f and 7f instruments, known as magnetic sector SIMS. Several ion‐implanted samples having different conditions are prepared for the analyses.As a result of experiments, redistribution of boron in crystalline silicon is suppressed suitably by cooling method using liquid nitrogen. Furthermore, it was revealed that the boron redistribution takes place in activation‐annealing samples, while the redistribution cannot be observed in as‐implanted samples. Copyright © 2010 John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
