Abstract
Rod-like defects in annealed oxygen rich silicon crystals grown by the Czochralski method were investigated by means of transmission electron microscopy. The rod-like defect has an apparent Burgers vector along 〈100〉 and gives a dipole-like contrast. The rod defect plane is 〈100〉 and its character is found to be extrinsic. The clearly resolved dipoles associated with the rod-like defect consist of perfect dislocations and are interstitial in character. The rod-like defects are tentatively attributed to some form of SiOx precipitate.
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